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S70GL02GT Datasheet, Cypress Semiconductor

S70GL02GT memory equivalent, 2-gbit (256-mbyte) 3.0v flash memory.

S70GL02GT Avg. rating / M : 1.0 rating-11

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S70GL02GT Datasheet

Features and benefits

a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/wo.

Application

that require higher density, better performance and lower power consumption. This document contains information for the .

Description

The Cypress S70GL02GT 2-Gigabit MirrorBit® Flash memory device is fabricated on 45-nm MirrorBit® Eclipse™ process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write B.

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TAGS

S70GL02GT
2-Gbit
256-Mbyte
3.0V
Flash
Memory
S70GL02GP
S70GL02GS
S70GL01GN00
Cypress Semiconductor

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